2SC603 PDF Datasheet

２ＳC603 参考資料 規格 社名 用途 構造 Mnf. App. Type 最大定格 Max. Ratings (Ta=25ﾟC) VCBO VEBO Ic Pc Tj (V) (V) (mA) (mW) (ﾟC) 電気的特性 Elec. Character. (Ta=25ﾟC) 直流又はパルスhFE fab/ft* Cob VCE(V) Ic(mA) (MHz) (pF ) NEC Ch Si.E 7 7 200 150 150 100 0.5 70 5.5 外形 -1-

2SC6033 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6033 Unit : mm High-Speed Swtching Applications DC-DC Converter Applications Storobe Flash Applications ＴＳＭ 0 . 9 5 0 .9 5 2. 9± 0 . 2 1. 9± 0. 2 • • • High DC current gain: hFE = 250 to 400 (IC = 0.3 A) Low collector-emitter saturation: VCE (sat) = 0.18 V (max) High-speed switching: tf = 38 ns (typ.)

2SC6034 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6034 High-Speed, High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • High-speed switching: tf = 0.24 μs (max) (IC = 0.3 A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-

Transistors 2SC6036 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162 0.05 0.33+ −0.02 Unit: mm 0.05 0.10+ −0.02  Features  Low collector-emitter saturation voltage VCE(sat)  SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 3 0.15 min. 0.80±0.05

Transistors 2SC6037J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161J  Features  Low collector-emitter saturation voltage VCE(sat)  SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 0.27±0.02 Unit: mm 0.80±0.05 0.05 1.60+ −0.03 1.00±0.05 3 0.03 0