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Datasheet 2SC6026MFV Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 2SC6026MFV | Transistor Silicon NPN Epitaxial Type 2SC6026MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6026MFV
General-Purpose Amplifier Applications
• • • • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
0.8 ± 0.05 1.2 ± 0.05 0 |
Toshiba Semiconductor |
2SC6026 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
2SC6026 | Silicon NPN Epitaxial Type (PCT Process) General-Purpose Amplifier Applications |
Toshiba Semiconductor |
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2SC6026MFV | Transistor Silicon NPN Epitaxial Type |
Toshiba Semiconductor |
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2SC6026CT | General Purpose Amplifier Applications |
Toshiba |
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Número de pieza | Descripción | Fabricantes | |
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