No | Part number | Description ( Function ) | Manufacturers | |
2 | 2SC5765 | MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS Unit: mm · Low Saturation Voltage: VCE (sat) (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector power dissipat |
Toshiba Semiconductor |
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1 | 2SC5765 | NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH DESCRIPTION medium power amplifier applications strobo flash applications FEATURES * Low Saturation Voltage: VCE(sat) = 0.27 V (max.), (Ic = 3A / IB =60 mA) ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SC5765L-T9S-K 2SC5765G-T9S-K Note: |
Unisonic Technologies |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |