No | Part number | Description ( Function ) | Manufacturers | |
1 | 2SC5713 | TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • • • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max) High-speed switching: tf = 50 ns (typ.) Industrial Applications Unit: mm Maximum Ratings (Ta = 25°C) |
Toshiba Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 2SC5713 |
Part No | Description ( Function) | Manufacturers | |
2SC5700 | Silicon NPN Epitaxial VHF/UHF wide band amplifier 2SC5700 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1435 (Z) Rev.0 Jul. 2001 Features • High power gain low noise figure at low power operation: |S21| = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) 2 Outline MFPAK 3 1 2 1. Emitter 2. Base 3. |
Hitachi Semiconductor |
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2SC5700 | Silicon NPN Epitaxial 2SC5700 Silicon NPN Epitaxial VHF/UHF wide band amplifier REJ03G0751-0100 (Previous ADE-208-1435) Rev.1.00 Aug.10.2005 Features • High power gain low noise figure at low power operation: |S21|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline RENESAS P |
Renesas |
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2SC5702 | Silicon NPN Epitaxial To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003 |
Renesas |
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2SC5702 | Silicon NPN Epitaxial High Frequency Amplifier / Oscillator 2SC5702 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-1414 (Z) 1st. Edition Mar. 2001 Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz Outline MFPAK 3 1 2 |
Hitachi |
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2SC5703 | TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • • • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) Hi |
Toshiba Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |