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Datasheet 2SC5480 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | 2SC5480 | Silicon NPN Triple Diffused Horizntal Deflection Output 2SC5480
Silicon NPN Triple Diffused Horizntal Deflection Output
ADE-208-632 (Z) 1st. Edition Oct. 1, 1998 Features
• High breakdown voltage VCES = 1500 V • Isolated package TO–3PFM • Built-in damper diode
Outline
TO–3PFM
C 2
1 B
3 E
1
2 3
1. Base 2. Collector 3. Emitter
www.DataS |
Hitachi Semiconductor |
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1 | 2SC5480 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5480
DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode
APPLICATIONS ·Designed for horizontal deflection output stage applications.
ABSOLUTE MAXIMUM RATINGS |
Inchange Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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