No | Part number | Description ( Function ) | Manufacturers | |
1 | 2SC5374A | RF Transistor Ordering number : ENA1090A 2SC5374A RF Transistor 10V, 100mA, fT=5.2GHz, NPN Single SMCP http://onsemi.com Features • High gain : ⏐S21e⏐2=10.5dB typ (f=1GHz) • High cut-off frequency : fT=5.2GHz typ Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Cur |
ON Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
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Part No | Description ( Function) | Manufacturers | |
2SC5374 | NPN Epitaxial Planar Silicon Transistor Ordering number:EN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features · High gain : S21e2=10.5dB typ (f=1GHz). · High cutoff frequency : fT=5.2GHz typ. Package Dimensions unit:mm 2106A [2SC5374] 0.3 |
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2SC5370 | Silicon NPN Epitaxial Planar Transistor(Emergency Lighting Inverter and General Purpose) 2SC5370 Silicon NPN Epitaxial Planar Transistor sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5370 60 40 7 12 3 30(Tc=25°C) 150 –55to+150 Unit V V V A A W °C °C Application : Emergency Lighting Inverter and General Purpose (Ta=25°C) 2SC5370 |
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2SC5375 | NPN Epitaxial Planar Silicon Transistor Ordering number:EN5541A NPN Epitaxial Planar Silicon Transistor 2SC5375 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features · High gain : S21e2=10dB typ (f=1GHz). · High cutoff frequency : fT=5.2GHz typ. 0.425 Package Dimensions unit:mm 2059B [2SC5375 |
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2SC5376 | Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications 2SC5376 Unit: mm • Low collector saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • High collector curr |
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Vishay |
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