No | Part number | Description ( Function ) | Manufacturers | |
1 | 2SC5369 | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION FEATURES • High f T 14 GHz TYP. • High gain | S 21 e | 2 = 14 dB TYP. • NF = 1.3 dB, @f = 2 GHz, VCE = 3 V, IC = 3 mA • 6-pin small mini mold package @f = 2 GHz, V CE = 3 V, IC = 10 mA PACKAGE DIMENSION (in mm) 2.1±0.1 1.25±0.1 0.2 –0 +0.1 1 0.65 0.65 |
NEC |
0  1  2  3  4  5  6  7  8 9 |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |