No | Part number | Description ( Function ) | Manufacturers | |
1 | 2SC5219 | Silicon NPN Triple Diffused Planar 2SC5219 Silicon NPN Triple Diffused Planar Application Character display horizontal deflection output Features • High breakdown voltage VCES = 1700 V • High speed switching tf = 0.15 µsec (typ) • Built-in damper diode type • Isolated package TO-3P•FM Outline TO-3PFM 2 1. Base 2. Collector 3. Emitter 1 ID 1 2 3 3 Free Datasheet http:// / |
Hitachi |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 2SC5219 |
Part No | Description ( Function) | Manufacturers | |
2SC5200 | NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) 2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm • • • High breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc |
Toshiba Semiconductor |
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2SC5200 | NPN Epitaxial Silicon Transistor UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943 ORDERING INFORMATION Order Number Lead Free Ha |
Unisonic |
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2SC5200 | NPN Epitaxial Silicon Transistor 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC = 17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO=25 |
Fairchild Semiconductor |
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2SC5200 | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5200 DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1943 APPLICATIONS ·High current switching ·Recommended for 100W high fidelity audio frequency amplifier output s |
SavantIC |
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2SC5200 | POWER AMPLIFIER APPLICATION Free Datasheet http:/// Free Datasheet http:/// |
New Jersey Semi-Conductor |
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