| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | 2SC5198B | Silicon NPN triple diffusion planar transistor SEMICONDUCTOR 2SC5198B Series Silicon NPN triple diffusion planar transistor 10A/140V/100W RoHS RoHS Nell High Power Products 2.0 19.9±0.3 4.0 20.0 min 4.0 max TO-3P(B) FEATURES High breakdown voltage, V CEO =140V (min) Complementary to 2SA1941B TO-3P package which can be installed to the heat sink with one screw 2 3 +0.2 1.05 -0.1 5.45±0.1 C E +0.2 0.65 -0.1 5.45 |
 NELL SEMICONDUCTOR |
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Recommended search results related to 2SC5198B |
| Part No | Description ( Function) | Manufacturers | |
| 2SC5198 | NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) 2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm • • • High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifier’s output stage |
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| 2SC5198 | Silicon NPN Triple Diffused Transistor NPN Silicon NPN Triple Diffused Transistor R 2SC5198 VCEO=140V (min) 2SA1941 70W RoHS APPLICATIONS Power Amplifier Applications FEATURES High collector voltage VCEO=140V (min) Complementary to 2SA1941 Recommended for 70-W high-fidelity audio frequency amplifier output RoHS prod |
 JILIN SINO |
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| 2SC5198 | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5198 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SA1941 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier out |
 SavantIC |
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| 2SC5190 | Silicon NPN epitaxial planer type(For low-voltage high-frequency amplification) Transistor 2SC5190 Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm s Features q q q 2.1±0.1 0.425 1.25±0.1 0.425 High transition frequency fT. Small collector output capacitance Cob. S-Mini type package, allowing downsizing of the equ |
 Panasonic Semiconductor |
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| 2SC5191 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DATA SHEET SILICON TRANSISTOR 2SC5191 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz � |
 NEC |
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List of most widely used semiconductors
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| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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