No | Part number | Description ( Function ) | Manufacturers | |
2 | 2SC5090 | Silicon NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5090 2SC5090 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Ju |
Toshiba Semiconductor |
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1 | 2SC5090 | Silicon NPN Transistor INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC5090 DESCRIPTION ·High Gain Bandwidth Product fT = 10 GHz TYP. ·High Gain, Low Noise Figure ︱S21e︱2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz APPLICATIONS ·Designed for VHF~UHF band low noise amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V |
Inchange Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |