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Datasheet 2SC503 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | 2SC503 | (2SC503 / 2SC504) Silicon NPN Epitaxial Type w
w
w
.d
e e h s a t a
. u t4
m o c
|
 Toshiba |
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| 9 | 2SC5030 | NPN EPITAXIAL TYPE (STOROBE FLASH/ MUDIUM POWER AMPLIFIER APPLICATIONS) 2SC5030
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5030
Strobe Flash Applications Medium Power Amplifier Applications
Unit: mm
• • •
High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (min) (VCE = 2 V, IC = 4 A) Low saturation voltage: VCE (sat) = 0.5 |
 Toshiba Semiconductor |
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| 8 | 2SC5032 | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) Power Transistors
2SC5032
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2
s Features
q q q q q
φ3.2±0.1
9.9±0.3
2.9±0.2
4.1±0.2 8.0±0.2 Solder Dip
13.7–0.2
+0.5
High-speed switching High collector to base voltage VCBO Wide a |
 Panasonic Semiconductor |
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| 7 | 2SC5034 | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) Power Transistors
2SC5034
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2
s Features
q q q
φ3.2±0.1
9.9±0.3
2.9±0.2
4.1±0.2 8.0±0.2 Solder Dip
High collector to emitter VCEO High-speed switching Full-pack package with outstandin |
Panasonic Semiconductor |
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