No | Part number | Description ( Function ) | Manufacturers | |
1 | 2SC4767 | Silicon NPN epitaxial planer type Transistor Productnnua 2.3±0.2 Transistor 2SC4767 Silicon NPN epitaxial planer type For high-frequency power amplification s Features q High transition frequency fT. q Output of 0.6W is obtained in the VHF band (f=175MHz). s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector curr |
Panasonic Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 2SC4767 |
Part No | Description ( Function) | Manufacturers | |
2SC4702 | Silicon NPN Epitaxial 2SC4702 Silicon NPN Epitaxial Application High voltage amplifier Features • High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.5 pF Typ. Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4702 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage |
Hitachi Semiconductor |
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2SC4702 | Silicon NPN Epitaxial 2SC4702 Silicon NPN Epitaxial REJ03G0729-0300 (Previous ADE-208-1120A) Rev.3.00 Aug.10.2005 Application High voltage amplifier Features • High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.5 pF Typ. Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 |
Renesas |
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2SC4702 | Silicon NPN Epitaxial SMD Type Silicon NPN Epitaxial 2SC4702 SOT-23 Transistors Unit: mm Features High breakdown voltage +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 Small Cob 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 VCEO = 300 V Cob = 1.5 pF Typ. 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.B |
Kexin |
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2SC4703 | MICROWAVE LOW NOISE/ LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DATA SHEET SILICON TRANSISTOR 2SC4703 MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V). This low distortion 4.5±0.1 1.6± |
NEC |
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2SC4703 | NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V) |
CEL |
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Vishay |
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