No | Part number | Description ( Function ) | Manufacturers | |
1 | 2SC4714 | NPN Transistor 2SC4714 最htt新p:の//一情w括w報定wし.はs品てeホ種m保iー、c守oム保n廃.ペp守止aー品nとジa種s表をo、n記iごc廃.し覧c予oて.くj定いpだ品まさ種すい、。。廃 S品ol91d.3e3.r5種±Di0.p5を廃止 s q q s (TC=25˚C) TC=25°C Ta=25°C VCBO VCEO VEBO ICP IC PC Tj Tstg 300 300 7 200 100 15 1.4 150 –55 ~ +150 V V V mA mA W ˚C ˚C |
Panasonic |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 2SC4714 |
Part No | Description ( Function) | Manufacturers | |
2SC4702 | Silicon NPN Epitaxial 2SC4702 Silicon NPN Epitaxial Application High voltage amplifier Features • High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.5 pF Typ. Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4702 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage |
Hitachi Semiconductor |
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2SC4702 | Silicon NPN Epitaxial 2SC4702 Silicon NPN Epitaxial REJ03G0729-0300 (Previous ADE-208-1120A) Rev.3.00 Aug.10.2005 Application High voltage amplifier Features • High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.5 pF Typ. Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 |
Renesas |
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2SC4702 | Silicon NPN Epitaxial SMD Type Silicon NPN Epitaxial 2SC4702 SOT-23 Transistors Unit: mm Features High breakdown voltage +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 Small Cob 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 VCEO = 300 V Cob = 1.5 pF Typ. 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.B |
Kexin |
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2SC4703 | MICROWAVE LOW NOISE/ LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DATA SHEET SILICON TRANSISTOR 2SC4703 MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V). This low distortion 4.5±0.1 1.6± |
NEC |
|
2SC4703 | NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V) |
CEL |
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Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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