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2SC4187 PDF Datasheet

The 2SC4187 is MICrowave Low Noise Amplifier NPN SilICon Epitaxial Transistor Super Mini. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 2SC4187
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

DATA SHEET SILICON TRANSISTOR 2SC4187 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4187 is designed primarily for use in low voltage and low current application up to UHF band. The 2SC4187 is ideal for pagers, electro-optic detector postamplifier applications, and other battery powered systems. Super mini mold package make

NEC
NEC
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Recommended search results related to 2SC4187

Part No Description ( Function) Manufacturers PDF
2SC4102   High-voltage Amplifier Transistor(120V/ 50mA)

2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S !Features 1) High breakdown voltage. (BVCEO = 120V) 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. !External dimensions (Units : mm) 2SC4102 (1) 0.65 0.65 0

ROHM Semiconductor
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2SC4102   High-voltage Amplifier Transistor

SMD Type High-voltage Amplifier Transistor 2SC4102 Transistors Features High breakdown voltage.(VCEO = 120V) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collect

Kexin
Kexin
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2SC4102   TRANSISTOR

2SC4102 TRANSISTOR (NPN) FEATURES  High Breakdown Voltage  Complements the 2SA1579 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current C

Jin Yu Semiconductor
Jin Yu Semiconductor
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2SC4102W   Silicon Epitaxial Planar Transistor

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z Excellent hFE linearity. Power dissipation:PCM=200mW Production specification 2SC4102W Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No. 2SC4102W Ma

Galaxy Semi-Conductor
Galaxy Semi-Conductor
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2SC4104   PNP/NPN Epitaxial Planar Silicon Transistors

Ordering number:EN3172 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1580/2SC4104 High-Definition CRT Display Applications Features · High fT. · Small reverse transfer capacitance. · Adoption of FBET process. Package Dimensions unit:mm 2018A [2SA1580/2SC4104] ( ) : 2SA15

Sanyo Semicon Device
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