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Datasheet 2SC4177 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | 2SC4177 | NPN EPITAXIAL SILICON TRANSISTOR RoHS 2SC4177
2SC4177 DFEATURES
TRANSISTOR (NPN )
TPower dissipation
.,LPCM:
0.15 W (Tamb=25℃)
1. 01 REF
0. 30 2. 00¡ À0. 05
Collector current
OICM: 0.1 A
Collector-base voltage
CV(BR)CBO: 60
V
1. 30¡ À0. 03
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150 |
 WEJ |
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| 5 | 2SC4177 | AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
 NEC |
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| 4 | 2SC4177 | NPN Silicon Epitaxia SMD Type
NPN Silicon Epitaxia 2SC4177
Features
High dc current gain High voltage.
Transistors IC
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction tempera |
 Kexin |
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| 3 | 2SC4177 | NPN Plastic-Encapsulate Transistor 2SC4177
Elektronische Bauelemente 0.1A , 60V NPN Plastic-Encapsulate Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-323
A
3 3
High DC Current Gain. High Voltage. Complementary to 2SA1611
1
L
Top View
2
C B
1 2
APPLICATIONS
K |
 SeCoS |
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