No | Part number | Description ( Function ) | Manufacturers | |
3 | 2SC3709 | NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3709A 2SC3709A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1451A Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base volt |
Toshiba Semiconductor |
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2 | 2SC3709 | Silicon NPN Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3709 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 0.4V(Max)@IC= 6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1451 APPLICATIONS ·Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO |
Inchange Semiconductor |
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1 | 2SC3709A | High-Current Switching Applications 2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3709A High-Current Switching Applications Unit: mm • • • Low collector saturation voltage: VCE (sat) = 0.4 V (max) High-speed switching: tstg = 1.0 µs (typ.) Complementary to 2SA1451A Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage |
Toshiba |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |