No | Part number | Description ( Function ) | Manufacturers | |
2 | 2SC3663 | NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DATA SHEET SILICON TRANSISTOR 2SC3663 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURES • Low-voltage, low-current, low-noise and high-gain NF = 3.0 dB TYP. GA = 3.5 dB TYP. cordless phones, etc. • Gold electrode gives high reliability. • Mini mold package, ideal for hybrid ICs. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz @VCE = 1 V, IC = 25 |
NEC |
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1 | 2SC3663 | Transistor SMD Type NPN Epitaxial Silicon Transistor 2SC3663 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Low-voltage, low-current, low-noise and high-gain NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz Ideal for battery drive of pagers, compact radio equipment cordless phones, etc. Gold electrode gi |
Kexin |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |