No | Part number | Description ( Function ) | Manufacturers | |
1 | 2SC3623A | NPN SILICON TRANSISTOR DATA SHEET SILICON TRANSISTORS 2SC3623, 3623A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3623) VEBO: 15 V (2SC3623A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to |
NEC |
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Recommended search results related to 2SC3623A |
Part No | Description ( Function) | Manufacturers | |
2SC3623 | NPN SILICON TRANSISTOR DATA SHEET SILICON TRANSISTORS 2SC3623, 3623A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: |
NEC |
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2SC3620 | Silicon NPN Triple Diffused Type TRANSISTOR 2SC3620 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC3620 Color TV Horizontal Driver Applications Color TV Chroma Output Applications Unit: mm • High breakdown voltage: VCEO = 300 V • Recommended for chroma output and driver applications for line-op |
Toshiba Semiconductor |
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2SC3621 | NPN EPITAXIAL TYPE (COLOR TV VERT. DEFLECTION/CLASS B SOUND OUTPUT APPLICATIONS) 2SC3621 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3621 Color TV Vertitcal Deflection Output Applications Color TV Class-B Sound Output Applications Unit: mm • • • Large collector current and collector power dissipation capability Recommended for vert |
Toshiba Semiconductor |
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2SC3622 | NPN Silicon Transistor DATA SHEET SILICON TRANSISTORS 2SC3622, 3622A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA VCE(sat) = 0.07 V TYP. @IC/IB |
NEC |
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2SC3622A | NPN Silicon Transistor DATA SHEET SILICON TRANSISTORS 2SC3622, 3622A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA VCE(sat) = 0.07 V TYP. @IC/IB |
NEC |
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Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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