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2SC3583 PDF Datasheet

The 2SC3583 is SilICon NPN Rf Transistor, NPN SilICon Epitaxial Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
3 2SC3583
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. Th

NEC
NEC
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2 2SC3583
Silicon NPN RF Transistor

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC3583 DESCRIPTION ·Low Noise Figure, High Gain, and High Current Capability Achieve a Very Wide Dynamic Range and Excellent Linearity. ·Low Noise and High Gain NF = 1.2 dB TYP. @f = 1.0 GHz Ga = 13 dB TYP. @f = 1.0 GHz APPLICATIONS ·Designed for use in low-noise and small signal amplifiers

Inchange Semiconductor
Inchange Semiconductor
pdf
1 2SC3583
NPN Silicon Epitaxial Transistor

SMD Type NPN Silicon Epitaxial Transistor 2SC3583 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features NF 1.2 dB TYP. @f = 1.0 GHz Ga 13 dB TYP. @f = 1.0 GHz +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage

Kexin
Kexin
pdf

[1]    

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