|
|
Datasheet 2SC3359S Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 2SC3359S | Power Transistor 2SC3359S
Transistors
Power Transistor (80V, 0.3A)
2SC3359S
zFeatures 1) High breakdown voltage, BVCEO=80V 2) Low saturation voltage, typically VCE(sat) = 0.2V at IB=0.3A / 0.03A
zElectrical characteristics (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage C |
ROHM Semiconductor |
2SC33 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
2SC3358 | NPN Silicon Epitaxial Transistor |
Unisonic Technologies |
|
2SC3378 | Transistoe |
Toshiba |
|
2SC3311A | Silicon NPN epitaxial planer type(For low-frequency amplification) |
Panasonic Semiconductor |
Esta página es del resultado de búsqueda del 2SC3359S. Si pulsa el resultado de búsqueda de 2SC3359S se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |