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Datasheet 2SC3279 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | 2SC3279 | NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS) 2SC3279
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3279
Strobe Flash Applications Medium Power Amplifier Applications
· High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A) · Low sat |
 Toshiba Semiconductor |
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| 7 | 2SC3279 | NPN Transistor RoHS
2SC3279
2SC3279
TRANSISTOR (NPN) TO-92
FEATURES Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERIST |
 WEJ |
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| 6 | 2SC3279 | NPN Silicon Epitaxial Planar Transistor ST 2SC3279
NPN Silicon Epitaxial Planar Transistor
for storobo flash and medium power amplifier applications. The transistor is subdivided into four groups L, M, N and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Abso |
 PACO |
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| 5 | 2SC3279 | NPN Transistor http://
http://
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 ETC |
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