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Datasheet 2SC2879 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SC2879 | TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS)(LOW SUPPLY VOLTAGE USE) |
 Toshiba Semiconductor |
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| 2 | 2SC2879 | NPN SILICON RF POWER TRANSISTOR 2SC2879
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC2879 is a 12.5 V transistor designed primarily for SSB linear power amplifier applications up tp 28 MHz.
PACKAGE STYLE .500 4L FLG
.112x45° L A FULL R
FEATURES:
• PG = 13 Typ. min. at 100 W/28 MHz • IMD3 = -24 dBc max. at 100 W( |
 ASI |
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| 1 | 2SC2879A | SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2879A
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)
Unit in mm z z z z z Specified 12.5V, 28MHz Characteristics Output Power Power Gain Collector Efficiency : Po = 100WPEP : Gp = 13dB : ηC = 35% (Min.)
Int |
 Toshiba |
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