No | Part number | Description ( Function ) | Manufacturers | |
1 | 2SC2717M | Silicon NPN transistor 2SC2717M Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 增益高,hFE 线性好。 High gain, good linearity of hFE. 用途 / Applications 用于电视末级图象放大。 TV final picture IF amplifier applications. 内部等效电路 / Equivalent Circ |
BLUE ROCKET ELECTRONICS |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 2SC2717M |
Part No | Description ( Function) | Manufacturers | |
2SC2717 | Silicon NPN Epitaxial Planar Type Transistor 2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 TV Final Picture IF Amplifier Applications Unit: mm · High gain: Gpe = 33dB (typ.) (f = 45 MHz) · Good linearity of hFE. Maximum Ratings (Ta = 25°C) Characteristics 2SC2216 Collector-bas |
Toshiba Semiconductor |
|
2SC2717 | NPN Plastic-Encapsulated Transistor 2SC2717 Elektronische Bauelemente 0.05A , 30V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 G H High Gain:Gpe=33 dB(Typ.)(f =45MHz) Good Linearity of hFE J A B K D Base Emitter � |
SeCoS |
|
2SC2717 | NPN Transistor 1. BASE 2. EMITTER 3. COLLECTOR 2SC2717(NPN) TO-92 Bipolar Transistors TO-92 Features High Gain: Gpe =33 dB ( Typ. ) ( f =45MHZ) Good Linearity of hFE. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO |
LGE |
|
2SC2717 | Silicon NPN transistor 2SC2717 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features 增益高,hFE 线性好。 High gain, good linearity of hFE. 用途 / Applications 用于电视末级图� |
BLUE ROCKET ELECTRONICS |
|
2SC2710 | Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2710 2SC2710 For Audio Amplifier Applications Unit: mm · High DC current gain: hFE (1) = 100~320 · Complementary to 2SA1150 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter |
Toshiba Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |