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2SC2712-GR PDF Datasheet

The 2SC2712-GR is NPN PlastIC-encapsulate Transistors. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 2SC2712-GR
NPN Plastic-Encapsulate Transistors

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL NPN Plastic-Encapsulate Transistors SOT-23 Features • • • • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Complementary to

MCC
MCC
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Recommended search results related to 2SC2712-GR

Part No Description ( Function) Manufacturers PDF
2SC2712   Silicon NPN Epitaxial Type TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2712 2SC2712 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95

Toshiba Semiconductor
Toshiba Semiconductor
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2SC2712   AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2SC2712 AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current : VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise 3 NPN SILICON TRANSISTOR 1 2 SOT-23 *Pb

Unisonic Technologies
Unisonic Technologies
datasheet pdf
2SC2712   Silicon NPN Transistors

2SC2712 3 1 2 SOT-23 WEITRON http://www.weitron.com.tw 2SC2712 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC= 2 mAdc, VCE= 6.0 Vdc) Collector-Emitter

Weitron Technology
Weitron Technology
datasheet pdf
2SC2712   Silicon Epitaxial Planar Transistor

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z z z Low noise:NF=1dB (Typ.),10 dB(Max). Complementary to 2SA1162. High voltage and high current. High hFE linearity. Production specification 2SC2712 Pb Lead-free APPLICATIONS z Audio frequency general pu

Galaxy Semi-Conductor
Galaxy Semi-Conductor
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2SC2712   Silicon NPN Epitaxial Type Transistor

SMD Type Silicon NPN Epitaxial Type Transistor 2SC2712 SOT-23 Transistors Unit: mm Features High voltage and high current: VCEO = 50 V, IC = 150 mA (max) +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low noise: NF = 1dB (typ.), 10dB (max) 0.55 Hig

Kexin
Kexin
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[1]    

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1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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