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Datasheet 2SC1972 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2SC1972 | NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) |
 Mitsubishi Electric Semiconductor |
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| 3 | 2SC1972 | NPN SILICON RF POWER TRANSISTOR 2SC1972
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications.
FEATURES INCLUDE:
• • • Replaces Original 2SC1972 in Most Applications High Gain Reduces Drive Requirements Economical TO-220CE Package
PACKAGE STY |
 ASI |
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| 2 | 2SC1972 | Silicon NPN POWER TRANSISTOR HG
HG RF POWER TRANSISTOR
Semiconductors
ROHS Compliance,Silicon NPN POWER TRANSISTOR
2SC1972
Note : Above parameters , ratings , limits and conditions are subject to change
www.HGSemi.com
Sep. 1998
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 HGSemi |
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| 1 | 2SC1972 | silicon NPN epitaxial planar type transistor 2SC1972
Description
The Eleflow 2SC1972 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the VHF band, ideal for mobile radio applications.
Features
• High power gain: Gpe ≥ 7.5dB @Vcc = 13.5V, Po = 14W, f = 175MHz • Emitter ballasted construction for |
 Eleflow |
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