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2SC1971 PDF Datasheet

The 2SC1971 is SilICon NPN Power Transistor, NPN SilICon Rf Power Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
4 2SC1971
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
pdf
3 2SC1971
Silicon NPN Power Transistor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1971 DESCRIPTION ·High Power Gain: Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V ·High Reliability APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-Bas

Inchange Semiconductor
Inchange Semiconductor
pdf
2 2SC1971
NPN SILICON RF POWER TRANSISTOR

2SC1971 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC1971 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • • • Replaces Original 2SC1971 in Most Applications High Gain Reduces Drive Requirements Economical TO-220CE Package PACKAGE STYLE TO-220AB (COMMON EMITTER) MAXIMUM RATINGS IC VCBO PDISS TSTG θJC 2.0 A 35 V

Advanced Semiconductor
Advanced Semiconductor
pdf
1 2SC1971
Trans GP BJT NPN 17V 2A 3-Pin(3+Tab) TO-220

New Jersey Semiconductor
New Jersey Semiconductor
pdf

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