No | Part number | Description ( Function ) | Manufacturers | |
2 | 2SC1881K | Silicon NPN Triple Diffused 2SC1881(K) Silicon NPN Triple Diffused Application High gain amplifier power switching Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 6.8 kΩ (Typ) 400 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissip |
Hitachi Semiconductor |
|
1 | 2SC1881K | Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SC1881K DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.2V(Max)@ IC= 2.5A APPLICATIONS ·Designed for High gain amplifier power switching applica |
Inchange Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |