No | Part number | Description ( Function ) | Manufacturers | |
24 | 2SC1815 | AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015 1 TO-92 *Pb-free plating product number: 2SC1815L ORDERING INFORMATION Order Number Normal Lead Free Plating 2S |
Unisonic Technologies |
|
23 | 2SC1815 | Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications 2SC1815 Unit: mm · High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) · Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) · Low |
Toshiba Semiconductor |
|
22 | 2SC1815 | NPN SILICON TRANSISTOR |
Micro Electronics |
|
21 | 2SC1815 | Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Transistor isc Product Specification 2SC1815 DESCRIPTION ·High Voltage and High Current Vceo=50V(Min.),Ic=150mA(Max) ·Excellent hFE Linearity ·Low Noise ·Complement to Type 2SA1015(O,Y,GR class) APPLICATIONS ·Audio frequency general purpose amplifier Applications ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T |
Inchange Semiconductor |
|
20 | 2SC1815 | NPN Transistor SMD Type NPN Transistor 2SC1815 Transistors IC SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 Features Power dissipation +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage C |
Kexin |
|
19 | 2SC1815 | NPN EPITAXIAL PLANAR TRANSISTOR DC COMPONENTS CO., LTD. R 2SC1815 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of AF amplifier general purpose amplification. TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) o o |
Dc Components |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |