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2SB930 PDF Datasheet

The 2SB930 is Transistor, SilICon PNP Epitaxial Planar Type(for Power AmplifICation). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
5 2SB930
Silicon PNP epitaxial planar type(For power amplification)

Power Transistors 2SB930, 2SB930A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 For power amplification Complementary to 2SD1253 and 2SD1253A s Features q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling direct solderi

Panasonic Semiconductor
Panasonic Semiconductor
pdf
4 2SB930
Transistor

Product specification 2SB930 TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features High forward current transfer ratio hFE which has satisfactory linearity. +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 Low collector-emitter

TY Semiconductor
TY Semiconductor
pdf
3 2SB930A
Silicon PNP epitaxial planar type(For power amplification)

Power Transistors 2SB930, 2SB930A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 For power amplification Complementary to 2SD1253 and 2SD1253A s Features q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling direct solderi

Panasonic Semiconductor
Panasonic Semiconductor
pdf
2 2SB930A
Transistor

SMD Type Silicon PNP Epitaxial Planar Type 2SB930A TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features High forward current transfer ratio hFE which has satisfactory linearity. +0.2 9.70 -0.2 Low collector-emitter saturation voltage VCE(sat). +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.

Kexin
Kexin
pdf
1 2SB930A
Transistor

Product specification 2SB930A TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features High forward current transfer ratio hFE which has satisfactory linearity. +0.2 9.70 -0.2 Low collector-emitter saturation voltage VCE(sat). +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.2

TY Semiconductor
TY Semiconductor
pdf

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