| No | Part number | Description ( Function ) | Manufacturers | |
| 9 | 2SB709A | Silicon PNP Epitaxial Transistor Transistor 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD601A 2.8 –0.3 +0.2 Unit: mm s Features q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 0.95 1.1 –0.1 +0.2 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperat |
 Panasonic Semiconductor |
|
| 8 | 2SB709A | PNP Transistors SMD Type TransistIoCrs Silicon PNP Epitaxial Planar Type 2SB709A Features High forward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0 |
 Kexin |
|
| 7 | 2SB709A | Plastic-Encapsulated Transistors Transys Electronics L I M I T E D SOT-23 Plastic-Encapsulated Transistors SOT-23 1. BASE 2. EMITTER 2SB709A FEATURES Power dissipation PCM: TRANSISTOR (PNP) 3. COLLECTOR 0.2 W (Tamb=25℃) 0. 95 1. 0 2. 4 1. 3 Collector current -0.2 A ICM: Collector-base voltage -45 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +1 |
 TRANSYS |
|
| 6 | 2SB709A | Silicon Epitaxial Planar Transistor BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor High forward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2SB709A FEATURES z z Pb Lead-free APPLICATIONS z For general amplification complementary to 2SD601A |
 Galaxy Semi-Conductor Holdings Limited |
|
| 5 | 2SB709A | BIPOLAR PNP TRANSISTOR RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * Power dissipation PCM : 0.2 W(Tamb=25OC) 2SB709A MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings |
 Rectron |
|
| 4 | 2SB709A | Silicon PNP transistor 2SB709A Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package. 特征 / Features 与 2SD601A 互补。 Complementary pair with 2SD601A. 用途 / Applications 用于普通功率放大。 General power amplifier applications. 内部等效电路 / Equivalent Circuit 引脚排列 |
 BLUE ROCKET ELECTRONICS |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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