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Datasheet 2SB631K Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2SB631K | PNP / NPN Epitaxial Planar Silicon Transistors Ordering number : ENN346G
2SB631, 631K/ 2SD600, 600K
PNP/NPN Epitaxial Planar Silicon Transistors
100V/120V, 1A Low-Frequency
Power Amplifier Applications
Features
· High breakdown voltage VCEO 100/120V, High current 1A.
· Low saturation voltage, excellent hFE linearity.
Package Dimensions
un |
 ON Semiconductor |
 |
| 3 | 2SB631K | 100V/120V/ 1A Low-Frequency Power Amp Applications Ordering number:346G
PNP/NPN Epitaxial Planar Silicon Transistor
2SB631,631K/2SD600,600K
100V/120V, 1A Low-Frequency Power Amplifier Applications
Features
· High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.
Package Dimensions
unit:mm 2009B |
 Sanyo Semicon Device |
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| 2 | 2SB631K | 100V/120V/ 1A Low-Frequency Power Amplifier Applications Ordering number:346G
PNP/NPN Epitaxial Planar Silicon Transistor
2SB631,631K/2SD600,600K
100V/120V, 1A Low-Frequency Power Amplifier Applications
Features
· High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.
Package Dimensions
unit:mm 2009B |
Sanyo Semicon Device |
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| 1 | 2SB631K | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB631 2SB631K
DESCRIPTION ·With TO-126 package ·Complement to type 2SD600/K ·High breakdown voltage VCEO:-100/-120V ·High current: -1A ·Low saturation voltage,excellent hFE linearity APPLICATIONS |
 SavantIC |
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