No | Part number | Description ( Function ) | Manufacturers | |
2 | 2SB1644 | Power Transistor Transistors Power Transistor (−80V, −4A) 2SB1644 2SB1644 !Features 1) Low saturation voltage. (Typ. VCE(sat) = −0.5V at IC / IB = −3A / −0.3A) 2) Excellent DC current gain characteristics. !External dimensions (Units : mm) 13.1 3.2 10.1 5.08 2.54 (3) (2) (1) 1.24 0.78 !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter vo |
ROHM Semiconductor |
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1 | 2SB1644J | PNP -4A -80V Power Transistor 2SB1644J PNP -4A -80V Power Transistor Parameter VCEO IC Value 80V 4A Features 1) Suitable for Power Driver 2) Low VCE(sat) VCE(sat)= 1.5V(Max.) (IC/IB= 3A/ 300mA) 3) Lead Free/RoHS Compliant. Outline LPT(S) (D2-PAK) Collector Base Emitter 2SB1644J (SC-83) Datasheet Inner circuit Collector Base Emitter Packaging specifications Part No. Packa |
ROHM Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |