No | Part number | Description ( Function ) | Manufacturers | |
1 | 2SB1570 | Silicon PNP Epitaxial Planar Transistor(Audio/ Series Regulator and General Purpose) (7 0 Ω ) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1570 –160 –150 –5 –12 –1 150(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SB1570 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–160V VEB=–5V IC=–30mA VCE=–4V, IC=–7A IC=–7A, IB=–7mA IC=–7A |
Sanken electric |
0  1  2  3  4  5  6  7  8 9 |
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2SB1502 | Silicon PNP Darlington Power Transistor C/ J. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor 2SB1502 DESCRIPTION • High DC Current Gain: hFE= 5000(Min)@lc= -4A • Low-Collector Saturation Voltage: VCE(satr -2 |
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2SB1502 | Trans Darlington PNP 100V 5A |
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2SB1503 | Silicon PNP epitaxial planar type Darlington(For power amplification) Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2276 6.0 20.0±0.5 φ 3.3±0.2 5.0±0.3 3.0 Unit: mm 26.0±0.5 10.0 s Features q q q Optimum for 110W HiFi output High foward current transfer ratio hFE: 5000 |
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2SB1503 | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1503 DESCRIPTION ·With TO-3PL package ·Complement to type 2SD2276 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |