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2SB1412 PDF Datasheet

The 2SB1412 is SilICon PNP Transistor, Low Frequency Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
7 2SB1412
Low Frequency Transistor

Low frequency transistor (−20V,−5A) 2SB1412 zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. zStructure Epitaxial planar type PNP silicon transistor zDimensions (Unit : mm) 2SB1412 ROHM : CPT3 EIAJ : SC-63 ∗ Denotes hFE (1) Base (2) Collector (3) Emitter zAbsolute

ROHM Semiconductor
ROHM Semiconductor
pdf
6 2SB1412
Silicon PNP Power Transistor

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1412 DESCRIPTION ·Small and slim package making it easy to make 2SB1205-used set smaller ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOL

Inchange Semiconductor
Inchange Semiconductor
pdf
5 2SB1412
PNP EPITAXIAL PLANAR TRANSISTOR

2SB1412 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER 2 3 Features: * Excellent DC Current Gain Characteristics * Low VCE(Sat) 1 D-PAK(TO-252) Mechanical Data: * Case : Molded Plastic * Weight : 0.925 grams ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Cu

Weitron Technology
Weitron Technology
pdf
4 2SB1412
HIGH VOLTAGE SWITCHING TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. 1 FEATURES *Excellent DC current gain characteristics *Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) TO-252 *Pb-free plating product number:2SB1412L ORDERING INFORMATION Normal Or

Unisonic Technologies
Unisonic Technologies
pdf
3 2SB1412
Low Frequency Transistor

SMD Type Low Frequency Transistor 2SB1412 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 PNP silicon transistor. 1 Base 2 Collector 3 Emitter Ab

Kexin
Kexin
pdf
2 2SB1412
PNP Silicon Low Frequency Transistor

Elektronische Bauelemente 2SB1412 -5A , -30V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Designed for general Low VCE(sat) D-Pack (TO-252) CLASSIFICATION OF hFE Product-Rank 2SB1412-P 2SB1412-Q Range 82~180 120~270 2SB1412-R 180~390 A BC D PACKAGE INFORMATION Package MPQ TO-252 2.5K Leade

SeCoS
SeCoS
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