No | Part number | Description ( Function ) | Manufacturers | |
7 | 2SB1412 | Low Frequency Transistor Low frequency transistor (−20V,−5A) 2SB1412 zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. zStructure Epitaxial planar type PNP silicon transistor zDimensions (Unit : mm) 2SB1412 ROHM : CPT3 EIAJ : SC-63 ∗ Denotes hFE (1) Base (2) Collector (3) Emitter zAbsolute |
ROHM Semiconductor |
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6 | 2SB1412 | Silicon PNP Power Transistor isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1412 DESCRIPTION ·Small and slim package making it easy to make 2SB1205-used set smaller ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOL |
Inchange Semiconductor |
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5 | 2SB1412 | PNP EPITAXIAL PLANAR TRANSISTOR 2SB1412 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER 2 3 Features: * Excellent DC Current Gain Characteristics * Low VCE(Sat) 1 D-PAK(TO-252) Mechanical Data: * Case : Molded Plastic * Weight : 0.925 grams ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Cu |
Weitron Technology |
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4 | 2SB1412 | HIGH VOLTAGE SWITCHING TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. 1 FEATURES *Excellent DC current gain characteristics *Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) TO-252 *Pb-free plating product number:2SB1412L ORDERING INFORMATION Normal Or |
Unisonic Technologies |
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3 | 2SB1412 | Low Frequency Transistor SMD Type Low Frequency Transistor 2SB1412 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 PNP silicon transistor. 1 Base 2 Collector 3 Emitter Ab |
Kexin |
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2 | 2SB1412 | PNP Silicon Low Frequency Transistor Elektronische Bauelemente 2SB1412 -5A , -30V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Designed for general Low VCE(sat) D-Pack (TO-252) CLASSIFICATION OF hFE Product-Rank 2SB1412-P 2SB1412-Q Range 82~180 120~270 2SB1412-R 180~390 A BC D PACKAGE INFORMATION Package MPQ TO-252 2.5K Leade |
SeCoS |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |