No | Part number | Description ( Function ) | Manufacturers | |
7 | 2SB1386 | Low Frequency Transistor(-20V/-5A) Transistors Low Frequency Transistor (*20V,*5A) 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436 FFeatures 1) Low VCE(sat). VCE(sat) = *0.35V (Typ.) (IC / IB = *4A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units: mm) (96-141-B204) 211 Tra |
ROHM Semiconductor |
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6 | 2SB1386 | Epitaxial Planar Transistor PNP Silicon 2SB1386 Epitaxial Planar Transistor PNP Silicon 1 BASE COLLECTOR 3 1 2 EMITTER 3 2 SOT-23 MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -20 -30 -6.0 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board (1) TA =25 |
Weitron Technology |
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5 | 2SB1386 | LOW FREQUENCY PNP TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SB1386 LOW FREQUENCY PNP TRANSISTOR 1 PNP SILICON TRANSISTOR FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) SOT-89 *Pb-free plating product number: 2SB1386L ORDERING INFORMATION Order Number Package Normal Lead Free Plating 2SB1386-x-AB3-F-R 2SB1386L |
Unisonic Technologies |
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4 | 2SB1386 | SOT-89 Plastic-Encapsulate Transistors WILLAS S1O.0ATS-8UR9FAPClEaMsOtUicNT-ESCnHcOaTTpKsYuBAlaRtReIERTRraECnTsIFiIEsRtSo-r2s0V- 200V SOD-123+ PACKAGE FM120-M+ 2SB1386 THRU FM1200-M+ Pb Free Product Features TRANSI•SBbTeaOtttceRhr pr(erPovcNeerPsses) design, excellent power dissipation offer leakage current and thermal resistance. s FEATUR• LEoopSwtimpirzoefibleosaurdrfaspcea moun ce. ted ap plicati o |
WILLAS |
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3 | 2SB1386 | Low Frequency Transistor SMD Type Low Frequency Transistor 2SB1386 Transistors Features Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Collector power dissipati |
KEXIN |
|
2 | 2SB1386 | PNP Silicon Low Frequency Transistor Elektronische Bauelemente 2SB1386 -5A, -30V PNP Silicon Low Frequency Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low VCE(sat) Excellent DC current gain characteristics Complements the 2SD2098 CLASSIFICATION OF hFE Product-Rank 2SB1386-P Range 82~180 Marking BHP 2SB1386-Q 120~270 BHQ 2SB1386-R 180~390 BHR SOT-89 123 A |
SeCoS |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |