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2SB1386 PDF Datasheet

The 2SB1386 is PNP Transistor, Low Frequency Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
7 2SB1386
Low Frequency Transistor(-20V/-5A)

Transistors Low Frequency Transistor (*20V,*5A) 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436 FFeatures 1) Low VCE(sat). VCE(sat) = *0.35V (Typ.) (IC / IB = *4A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units: mm) (96-141-B204) 211 Tra

ROHM Semiconductor
ROHM Semiconductor
pdf
6 2SB1386
Epitaxial Planar Transistor PNP Silicon

2SB1386 Epitaxial Planar Transistor PNP Silicon 1 BASE COLLECTOR 3 1 2 EMITTER 3 2 SOT-23 MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -20 -30 -6.0 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board (1) TA =25

Weitron Technology
Weitron Technology
pdf
5 2SB1386
LOW FREQUENCY PNP TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2SB1386 LOW FREQUENCY PNP TRANSISTOR 1 PNP SILICON TRANSISTOR „ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) SOT-89 *Pb-free plating product number: 2SB1386L „ ORDERING INFORMATION Order Number Package Normal Lead Free Plating 2SB1386-x-AB3-F-R 2SB1386L

Unisonic Technologies
Unisonic Technologies
pdf
4 2SB1386
SOT-89 Plastic-Encapsulate Transistors

WILLAS S1O.0ATS-8UR9FAPClEaMsOtUicNT-ESCnHcOaTTpKsYuBAlaRtReIERTRraECnTsIFiIEsRtSo-r2s0V- 200V SOD-123+ PACKAGE FM120-M+ 2SB1386 THRU FM1200-M+ Pb Free Product Features TRANSI•SBbTeaOtttceRhr pr(erPovcNeerPsses) design, excellent power dissipation offer leakage current and thermal resistance. s FEATUR• LEoopSwtimpirzoefibleosaurdrfaspcea moun ce. ted ap plicati o

WILLAS
WILLAS
pdf
3 2SB1386
Low Frequency Transistor

SMD Type Low Frequency Transistor 2SB1386 Transistors Features Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Collector power dissipati

KEXIN
KEXIN
pdf
2 2SB1386
PNP Silicon Low Frequency Transistor

Elektronische Bauelemente 2SB1386 -5A, -30V PNP Silicon Low Frequency Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low VCE(sat) Excellent DC current gain characteristics Complements the 2SD2098 CLASSIFICATION OF hFE Product-Rank 2SB1386-P Range 82~180 Marking BHP 2SB1386-Q 120~270 BHQ 2SB1386-R 180~390 BHR SOT-89 123 A

SeCoS
SeCoS
pdf

[1]    [2]    

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Vishay Semiconductor
Vishay
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On Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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