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Datasheet 2SB1184 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 12 | 2SB1184 | Silicon PNP Power Transistor isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1184
DESCRIPTION ·Low VCE(sat) ·Small and slim package ·Complements the 2SD1760/2SD1864 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power dissipation
ABSO |
 Inchange Semiconductor |
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| 11 | 2SB1184 | PNP Transistor 1. BASE
2. COLLECTOR 3. EMITTER
2SB1184(PNP)
TO-251/TO-252-2L Transistor
TO-251
1 23
Features
Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Complements the 2SD1760 / 2SD1864.
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
TO-252-2L
VCBO
Collect |
 LGE |
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| 10 | 2SB1184 | Power Transistor Power Transistor (-60V, -3A)
2SB1184 / 2SB1243
Features
1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A)
2) Complements the 2SD1760 / 2SD1864.
Dimensions (Unit : mm)
2SB1184
6.5±0.2
5.1
+0.2 −0.1
C0.5
2.3
+0.2 −0.1
0.5±0.1
2SB1243
6.8±0.2
2.5±0.2
1.5±0.3
4. |
 ROHM Semiconductor |
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| 9 | 2SB1184 | Power transistor SMD Type
Power transistor 2SB1184
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Low VCE(sat). PNP silicon transistor.
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.2 9.70 -0.2
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 - |
 Kexin |
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