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2SB1182PT PDF Datasheet

The 2SB1182PT is PNP Epitaxial Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 2SB1182PT
PNP Epitaxial Transistor

CHENMKO ENTERPRISE CO.,LTD SMALL FLAT PNP Epitaxial Transistor VOLTAGE 32 Volts APPLICATION * Power driver and Dc to DC convertor . 2SB1182PT CURRENT 2 Ampere FEATURE * Small flat package. (DPAK) * PC= 1.5 W (mounted on ceramic substrate). * High saturation current capability. .050 (1.27) .030 (0.77) DPAK .094 (2.38) .086 (2.19) .022 (0.55) .018 (0.45) CONSTRUCTION * PNP S

Chenmko Enterprise
Chenmko Enterprise
pdf

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Recommended search results related to 2SB1182PT

Part No Description ( Function) Manufacturers PDF
2SB1182   Medium power Transistor

Medium power transistor (32V, 2A) 2SB1182 / 2SB1240 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. Structure Epitaxial planar type PNP silicon transistor Dimensions (Unit : mm) 2SB1182 6.5±0.2 5.1

ROHM Semiconductor
ROHM Semiconductor
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2SB1182   Silicon PNP Power Transistor

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1182 DESCRIPTION ·Small and slim package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25�

Inchange Semiconductor
Inchange Semiconductor
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2SB1182   Medium Power Transistor

SMD Type Medium Power Transistor 2SB1182 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). Epitaxial planar type 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0

Kexin
Kexin
datasheet pdf
2SB1182   PNP PLASTIC ENCAPSULATE TRANSISTORS

2SB1182 PNP PLASTIC ENCAPSULATE TRA NSISTORS P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction

Weitron
Weitron
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2SB1182   MEDIUM POWER LOW VOLTAGE TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2SB1182 MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 PNP SILICON TRANSISTOR „ DESCRIPTION TO-252 The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. „ FEATURES * Hig

Unisonic Technologies
Unisonic Technologies
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