No | Part number | Description ( Function ) | Manufacturers | |
2 | 2SB1181 | Power Transistor 2SB1260 / 2SB1181
PNP -1.0A -80V Middle Power Transistor
Parameter
VCEO IC
Value
-80V -1.0A
lOutline
MPT3
Base Collector
Emitter
lFeatures
1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1898 / 2SD1733 3) Low VCE(sat)
VCE(sat)= -0.4V Max. (IC/IB= -500mA/ -50mA)
4) Lead Free/RoHS Compliant.
2SB1260 (SC-62) |
ROHM Semiconductor |
|
1 | 2SB1181 | Power Transistor SMD Type Power Transistor 2SB1181 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Hight breakdown voltage and high current. Low VCE(sat). +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Em |
Kexin |
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