No | Part number | Description ( Function ) | Manufacturers | |
1 | 2SB1180A | Silicon PNP Epitaxial Planar Type Power Transistors 2SB1180, 2SB1180A Silicon PNP epitaxial planar type darlington Unit: mm For medium-speed voltage switching Complementary to 2SD1750, 2SD1750A ■ Features • High forward current transfer ratio hFE • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 12.6±0.3 7.2±0.3 7.0±0.3 3 |
Panasonic |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 2SB1180A |
Part No | Description ( Function) | Manufacturers | |
2SB1180 | Silicon PNP Epitaxial Planar Type Power Transistors 2SB1180, 2SB1180A Silicon PNP epitaxial planar type darlington Unit: mm For medium-speed voltage switching Complementary to 2SD1750, 2SD1750A ■ Features • High forward current transfer ratio hFE • I type package enabling direct soldering of the radiating |
Panasonic |
|
2SB1181 | Power Transistor 2SB1260 / 2SB1181 PNP -1.0A -80V Middle Power Transistor Parameter VCEO IC Value -80V -1.0A lOutline MPT3 Base Collector Emitter lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1898 / 2SD1733 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -500mA/ - |
ROHM Semiconductor |
|
2SB1181 | Power Transistor SMD Type Power Transistor 2SB1181 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Hight breakdown voltage and high current. Low VCE(sat). +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4 |
Kexin |
|
2SB1182 | Medium power Transistor Medium power transistor (32V, 2A) 2SB1182 / 2SB1240 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. Structure Epitaxial planar type PNP silicon transistor Dimensions (Unit : mm) 2SB1182 6.5±0.2 5.1 |
ROHM Semiconductor |
|
2SB1182 | Silicon PNP Power Transistor isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1182 DESCRIPTION ·Small and slim package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25� |
Inchange Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |