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Datasheet 2SB1132 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | 2SB1132 | Medium Power Transistor Transistors
Medium Power Transistor (*32V, *1A)
2SB1132 / 2SA1515S / 2SB1237
FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = –500mA / –50mA) 2) Compliments 2SD1664 / 2SD1858. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units: mm)
(96-120-B12)
20 |
 ROHM Semiconductor |
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| 10 | 2SB1132 | PNP Plastic-Encapsulate Transistors 2SB1132
PNP Plastic-Encapsulate Transistors
SOT-89
1
1. BASE 2. COLLECTOR 3. EMITTER
2
3
C) ABSOLUTE MAXIMUM RATINGS (Ta=25%
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCBO VCEO VEBO IC ICP Collector Power Dissipation
Junction Temperature |
 Weitron Technology |
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| 9 | 2SB1132 | MEDIUM POWER TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SB1132
MEDIUM POWER TRANSISTOR
1
PNP SILICON TRANSISTOR
DESCRIPTION
The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor.
SOT-89
FEATURES
* Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)
1
TO-252
*Pb-free plating product number: 2SB1132 |
 Unisonic Technologies |
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| 8 | 2SB1132 | Transistors Transys
Electronics
L I M I T E D
SOT-89 Plastic-Encapsulated Transistors
2SB1132
FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) TRANSISTOR (PNP)
SOT-89
1. BASE 2. COLLECTOR 3. EMITTER 1 2 3
Collector current -1 A ICM: Collector-base voltage V V(BR)CBO: -40 Operating and storage junction temp |
 TRANSYS |
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