No | Part number | Description ( Function ) | Manufacturers | |
1 | 2SB1100 | Silicon PNP Power Transistors INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification 2SB1100 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ IC= -10A ·Complement to Type 2SD1591 APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE |
Inchange Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 2SB1100 |
Part No | Description ( Function) | Manufacturers | |
2SB1101 | (2SB1101 / 2SB1102) LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR |
Hitachi Semiconductor |
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2SB1101 | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1101 DESCRIPTION ·With TO-220 package ·Complement to type 2SD1601 ·DARLINGTON ·High DC current gain APPLICATIONS ·For low frequency power amplifier applications PINNING PIN |
SavantIC |
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2SB1102 | (2SB1101 / 2SB1102) LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR |
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2SB1102 | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1102 DESCRIPTION ·With TO-220 package ·Complement to type 2SD1602 ·DARLINGTON ·High DC current gain APPLICATIONS ·For low frequency power amplifier applications PINNING PIN |
SavantIC |
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2SB1103 | Silicon PNP Triple Diffused 2SB1103 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 4.0 kΩ (Typ) 200 Ω (Typ) 3 1 2 3 2SB1103 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Collector to |
Hitachi Semiconductor |
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