No | Part number | Description ( Function ) | Manufacturers | |
1 | 2SAR542D | Midium Power Transistors Midium Power Transistors (-30V / -5A)
2SAR542D
Structure PNP Silicon epitaxial planar transistor
Features 1) Low saturation voltage
VCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA) 2) High speed switching
Applications Driver
Dimensions (Unit : mm)
CPT3
(SC-63) |
ROHM Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
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Part No | Description ( Function) | Manufacturers | |
2SAR542F3 | PNP -3.0A -30V Middle Power Transistor 2SAR542F3 PNP -3.0A -30V Middle Power Transistor Parameter VCEO IC Value -30V -3A lFeatures 1) Suitable for Middle Power Driver. 2) Low VCE(sat) VCE(sat)=-0.20V(Max.). (IC/IB=-1A/-50mA) 3) High collector current. IC=-3A(max),ICP=-6A(max) 4) Leadless small SMD |
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2SAR542P | Midium Power Transistors Midium Power Transistors (-30V / -5A) 2SAR542P Structure PNP Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA) 2) High speed switching Applications Driver Packaging specifications |
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2SAR543D | Midium Power Transistors Midium Power Transistors (-50V / -4A) 2SAR543D Structure PNP Silicon epitaxial planar transistor Features 1) Low saturation voltage VCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA) 2) High speed switching Applications Driver Dimensions (Unit : mm) CPT3 (SC-63) < |
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2SAR543R | Midium Power Transistors Midium Power Transistors (-50V / -3A) 2SAR543R Structure PNP Silicon epitaxial planar transistor Features 1) Low saturation voltage VCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA) 2) High speed switching Applications Driver Dimensions (Unit : mm) TSMT3 (3) (1 |
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2SAR544D | Midium Power Transistors 1.5 9.5
Midium Power Transistors (-80V / -2.5A)
2SAR544D
Features 1) Low saturation voltage, typically
VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) 2) High speed switching
Dimensions (Unit : mm)
CPT3
(SC-63) |
ROHM Semiconductor |
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