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2SA812 PDF Datasheet

The 2SA812 is PNP Transistor, PNP Transistors. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
16 2SA812
PNP SILICON EPITAXIAL TRANSISTOR

NEC
NEC
pdf
15 2SA812
PNP General Purpose Transistors

PNP General Purpose Transistors P b Lead(Pb)-Free 2SA812 1 2 3 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation TA=25°C Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Value -60 -50 -5.0 -100 200 +150 -55 to +150 Unit V V V m

WEITRON
WEITRON
pdf
14 2SA812
SOT-23 BIPOLAR TRANSISTORS

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) 2SA812 FEATURES * Power dissipation PCM : 0.2 W(Tamb=25OC) * Collector current ICM : -0.1 A * Collector-base voltage V(BR)CBO : -60 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame

Rectron
Rectron
pdf
13 2SA812
SILICON PNP TRANSISTOR

2SA812(3CG812) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于音频放大/Purpose: Audio frequency amplifier application . 特点:与 2SC1623(3DG1623)互补/Features: Complementary pair with 2SC1623(3DG1623). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO -60 V VCEO -50 V VEBO -5.0 V IC -100 m

LZG
LZG
pdf
12 2SA812
PNP Plastic-Encapsulate Transistors

Plastic-Encapsulate Transistors FEATURES Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V 2SA812(PNP) MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature unless otherwise not

HOTTECH
HOTTECH
pdf
11 2SA812
PNP Transistors

SMD Type Transistors PNP Transistors 2SA812 Features High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) High Voltage: VCEO = -50 V +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1 Absolute Maximum Ratings Ta =

Kexin
Kexin
pdf

[1]    [2]    [3]    

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Part Number Function Manufacturers PDF
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Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
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On Semiconductor
ON Semiconductor
pdf

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