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Datasheet 2SA2140 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2SA2140 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA2140
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -180V(Min) ·Good Linearity of hFE
APPLICATIONS ·Designed for power amplification and for TV VM circuit.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
S |
 Inchange Semiconductor |
 |
| 3 | 2SA2140 | Silicon PNP Epitaxial Transistor
Power Transistors
2SA2140
Silicon PNP epitaxial planar type
Unit: mm
3.0±0.5
For power amplification For TV VM circuit ■ Features
• Satisfactory linearity of forward current transfer ratio hFE • High transition frequency (fT) • Full-pack package which can be installed |
 Panasonic Semiconductor |
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| 2 | 2SA2140 | Silicon PNP Power Transistor C/
'J
, Unc.
TELEPHONE: (973) 376-2922
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A.
(212)227-6005 FAX: (973) 376-8960
Silicon PNP Power Transistor
2SA2140
DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=-180V(Min) • Good Linearity of hFE
1
ppf i
2
<
PIN 1.BASE
2. COLLE |
 New Jersey Semi-Conductor |
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| 1 | 2SA2140 | Trans GP BJT PNP 180V 1.5A 3-Pin(3+Tab) TO-220D-A1 |
 New Jersey Semiconductor |
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