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Datasheet 2SA2029 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2SA2029 | General Purpose Transistor 2SA2029 / 2SA1774EB / 2SA1774 / 2SA1576UB / 2SA1576A / 2SA1037AK
PNP -150mA -50V General Purpose Transistors
Datasheet
Parameter
VCEO IC
Value
50V 150mA
Features 1) General Purpose. 2) Complementary NPN Types :
2SC5658 (VMT3) / 2SC4617EB (EMT3F) / 2SC4617 (EMT3) / 2SC4081UB (UMT3F) / 2 | ROHM Semiconductor | transistor |
2 | 2SA2029 | General 3urpose 7ransistors JIANGSUCHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-723 Plastic-Encapsulate Transistors
2SA2029 General 3urpose 7ransistors (PNP)
FEATURES z Excellent hFE linearity z Complements the 2SC5658
Marking: FQFRFS
SOT-723
1. BASE 2. EMITTER 3. COLLECTOR
Absolute maximum ratings (Ta=25℃)
Symbol
P | JCST | transistor |
3 | 2SA2029-Q | PNP Bipolar Transistor Small Signal Product
PNP Bipolar Transistor
2SA2029-Q/R/S
Taiwan Semiconductor
FEATURES
- Epitaxial planar die construction - Surface Mount Device Type
- Moisture sensitivity level 1 - For high voltage switcing and amplifier application - Pb free and RoHS compliant - Green compound (Halogen free) | Taiwan Semiconductor | transistor |
4 | 2SA2029-R | PNP Bipolar Transistor Small Signal Product
PNP Bipolar Transistor
2SA2029-Q/R/S
Taiwan Semiconductor
FEATURES
- Epitaxial planar die construction - Surface Mount Device Type
- Moisture sensitivity level 1 - For high voltage switcing and amplifier application - Pb free and RoHS compliant - Green compound (Halogen free) | Taiwan Semiconductor | transistor |
5 | 2SA2029-S | PNP Bipolar Transistor Small Signal Product
PNP Bipolar Transistor
2SA2029-Q/R/S
Taiwan Semiconductor
FEATURES
- Epitaxial planar die construction - Surface Mount Device Type
- Moisture sensitivity level 1 - For high voltage switcing and amplifier application - Pb free and RoHS compliant - Green compound (Halogen free) | Taiwan Semiconductor | transistor |
2SA Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2SA0683 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating Panasonic Semiconductor transistor | | |
2 | 2SA0684 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating Panasonic Semiconductor transistor | | |
3 | 2SA0879 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0879 (2SA879)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SC1573 ■ Features
• High collector-emitter voltage (Base open) VCEO
0.7+0.3 –0.2
0.7±0.1
Unit: mm
5.9±0.2 4.9±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base vo Panasonic Semiconductor transistor | | |
4 | 2SA0885 | Transistor, Silicon PNP Epitaxial Type Power Transistors
2SA0885 (2SA885)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification Complementary to 2SC1846 ■ Features
• Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installation t Panasonic Semiconductor transistor | | |
5 | 2SA0886 | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) Power Transistors
2SA0886 (2SA886)
Silicon PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SC1847
φ 3.16±0.1
3.8±0.3
Unit: mm
8.0+0.5 –0.1 3.2±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter volt Panasonic Semiconductor transistor | | |
6 | 2SA100 | Ge PNP Drift ETC transistor | | |
7 | 2SA1001 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification 2SA1001
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -130V(Min.)
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY Inchange Semiconductor transistor | |
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