No | Part number | Description ( Function ) | Manufacturers | |
12 | 2SA1943 | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier Applications 2SA1943 Unit: mm • High collector voltage: VCEO = −230 V (min) • Complementary to 2SC5200 • Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −2 |
Toshiba Semiconductor |
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11 | 2SA1943 | PNP Epitaxial Silicon Transistor PNP 硅外延晶体管 PNP Epitaxial Silicon Transistor R 2SA1943 SERIES 用途 应用于功率放大器 产品特性 高集电极电压:VCEO=230V (min) VCEO=250V (min) 与 2SC5200 互补 推荐用于 100W 音响频率放大器输出电路 环保(RoHS)产品 APPLICATIONS Power Amplifier Applications FEATURES High collector voltage:VCEO=230V (min) |
JILIN SINO |
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10 | 2SA1943 | PNP SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SA1943 PNP SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Complementary to UTC 2SC5200 * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage 1 TO-3PL ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SA1943L-x-T3L-T 2SA1943G-x-T3L-T TO-3PL Note: Pin Assignment: B: Base C: |
Unisonic Technologies |
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9 | 2SA1943 | PNP Epitaxial Silicon Transistor 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC = -17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complemen |
Fairchild Semiconductor |
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8 | 2SA1943 | Silicon PNP Power Transistors SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1943 DESCRIPTION ·With TO-3PL package ·Complement to type 2SC5200 APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outl |
Savantic |
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7 | 2SA1943 | POWER TRANSISTOR INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1943 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -230V(Min) ·Complement to Type 2SC5200 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier out |
Inchange Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |