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Datasheet 2SA1615-Z Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | 2SA1615-Z | Silicon PNP Power Transistor isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1615-Z
DESCRIPTION ·Large current capacity:IC(DC)= -10A IC(pulse)=-15A ·High hFE and low saturation voltage:
hFE= 200min (VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V (IC=-4A,IB=-0.05A) ·100% avalanche tested ·Minimum Lot-to-Lot variations for |
Inchange Semiconductor |
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3 | 2SA1615-Z | PNP SILICON EPITAXIAL TRANSISTOR DATA SHEET
SILICON POWER TRANSISTORS
2SA1615, 1615-Z
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switchi |
NEC |
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2 | 2SA1615-Z | P TYPE TTANSISTORS P TYPE TTANSISTORS -10A
2SA1615, 1615-Z
The 2SA1615 and 1615-Z are available for the large current control in small due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed.
PIN CONFIGURATION
2SA1615 2SA1615-Z
FEATURE Large current capacity: Ic |
Stanson Technology |
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1 | 2SA1615-Z | Transistor SMD Type
Silicon Power Transistors 2SA1615-Z
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
6.50 +0.2 5.30-0.2
+0.15 -0.15
Features
Large current capacity.
+0.2 9.70 -0.2
High hFE and low collector saturation voltage.
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
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Kexin |
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Número de pieza | Descripción | Fabricantes | |
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