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Datasheet 2SA1434 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SA1434 | PNP Epitaxial Planar Silicon Transistor Ordering number:ENN1853A
PNP Epitaxial Planar Silicon Transistor
2SA1434
High hFE, Low-Frequency General-Purpose Amp Applications
Applications
· Low frequency general-purpose amplifiers, drivers, muting circuits.
Features
· Ultrasmall-sized package permitting 2SA1434-used sets to be made smaller |  Sanyo Semicon Device | transistor |
| 2 | 2SA1434 | Transistor SMD Type
Transistors IC
PNP Epitaxial Planar Silicon Transistor 2SA1434
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Features
Adoption of FBET process. High DC current gain (hFE=500 to 1200).
+0.1 2.4-0.1
Unit: mm
Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). High VEBO (VEBO 15V).
+0.1 1.3-0 |  Kexin | transistor |
| 3 | 2SA1434 | Transistor Product specification
2SA1434
Features
Adoption of FBET process. High DC current gain (hFE=500 to 1200).
+0.1 2.4-0.1
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). High VEBO (VEBO 15V).
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55 |  TY Semiconductor | transistor |
2SA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SA0683 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating  Panasonic Semiconductor transistor | | |
| 2 | 2SA0684 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating Panasonic Semiconductor transistor | | |
| 3 | 2SA0879 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0879 (2SA879)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SC1573 ■ Features
• High collector-emitter voltage (Base open) VCEO
0.7+0.3 –0.2
0.7±0.1
Unit: mm
5.9±0.2 4.9±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base vo Panasonic Semiconductor transistor | | |
| 4 | 2SA0885 | Transistor, Silicon PNP Epitaxial Type Power Transistors
2SA0885 (2SA885)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification Complementary to 2SC1846 ■ Features
• Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installation t Panasonic Semiconductor transistor | | |
| 5 | 2SA0886 | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) Power Transistors
2SA0886 (2SA886)
Silicon PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SC1847
φ 3.16±0.1
3.8±0.3
Unit: mm
8.0+0.5 –0.1 3.2±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter volt Panasonic Semiconductor transistor | | |
| 6 | 2SA100 | Ge PNP Drift ETC transistor | | |
| 7 | 2SA1001 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification 2SA1001
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -130V(Min.)
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY  Inchange Semiconductor transistor | |
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