No | Part number | Description ( Function ) | Manufacturers | |
1 | 2SA1319 | High-Voltage Switching Applications Ordering number:EN1334C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features · Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process. Package Dimensions unit:mm 2003A [2SA1319/2SC3332] Switching Test Circuit (For PNP, the polarity is reversed) Unit |
Sanyo Semicon Device |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 2SA1319 |
Part No | Description ( Function) | Manufacturers | |
2SA1300 | TRANSISTOR (STROBO FLASH MEDIUM POWER AMPLIFIER APPLICATIONS) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications 2SA1300 Unit: mm · High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (ty |
Toshiba Semiconductor |
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2SA1300 | PNP EPITAXIAL SILICON TRANSISTOR UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES *High DC Current Gain and Excellent hFE Linearity. *hFE(1)=140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VC |
Unisonic Technologies |
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2SA1300 | Plastic-Encapsulated Transistors Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA1300 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current A ICM : -2 Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range T |
TRANSYS |
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2SA1300 | PNP EPITAXIAL PLANAR TRANSISTOR DC COMPONENTS CO., LTD. R 2SA1300 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use Strobe flash and medium power amplifier applications. Pinning 1 = Emitter 2 = Collector 3 = Base .190(4.83) .170(4.33) .190(4.83 |
Dc Components |
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2SA1300 | PNP Plastic Encapsulated Transistor 2SA1300 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free -2 A, -20 V PNP Plastic Encapsulated Transistor FEATURES TO-92 High DC Current gain and excellent hFE linearity Low Saturation Voltage G H CLASSIFICATION OF hF |
SeCoS |
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Vishay |
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