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2SA1319 PDF Datasheet

The 2SA1319 is High-voltage Switching ApplICations. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 2SA1319
High-Voltage Switching Applications

Ordering number:EN1334C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features · Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process. Package Dimensions unit:mm 2003A [2SA1319/2SC3332] Switching Test Circuit (For PNP, the polarity is reversed) Unit

Sanyo Semicon Device
Sanyo Semicon Device
pdf

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Recommended search results related to 2SA1319

Part No Description ( Function) Manufacturers PDF
2SA1300   TRANSISTOR (STROBO FLASH MEDIUM POWER AMPLIFIER APPLICATIONS)

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications 2SA1300 Unit: mm · High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (ty

Toshiba Semiconductor
Toshiba Semiconductor
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2SA1300   PNP EPITAXIAL SILICON TRANSISTOR

UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES *High DC Current Gain and Excellent hFE Linearity. *hFE(1)=140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VC

Unisonic Technologies
Unisonic Technologies
datasheet pdf
2SA1300   Plastic-Encapsulated Transistors

Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA1300 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current A ICM : -2 Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range T

TRANSYS
TRANSYS
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2SA1300   PNP EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD. R 2SA1300 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use Strobe flash and medium power amplifier applications. Pinning 1 = Emitter 2 = Collector 3 = Base .190(4.83) .170(4.33) .190(4.83

Dc Components
Dc Components
datasheet pdf
2SA1300   PNP Plastic Encapsulated Transistor

2SA1300 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free -2 A, -20 V PNP Plastic Encapsulated Transistor FEATURES   TO-92 High DC Current gain and excellent hFE linearity Low Saturation Voltage G H CLASSIFICATION OF hF

SeCoS
SeCoS
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[1]    

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Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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