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2SA1313 PDF Datasheet

The 2SA1313 is Transisitor (audio Frequency Low Power Amplifier/ Driver Stage Amplifier/ Switching. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
1 2SA1313
TRANSISITOR (AUDIO FREQUENCY LOW POWER AMPLIFIER/ DRIVER STAGE AMPLIFIER/ SWITCHING APPLICATIONS)

Toshiba Semiconductor
Toshiba Semiconductor
pdf

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Recommended search results related to 2SA1313

Part No Description ( Function) Manufacturers PDF
2SA1300   TRANSISTOR (STROBO FLASH MEDIUM POWER AMPLIFIER APPLICATIONS)

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications 2SA1300 Unit: mm · High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (ty

Toshiba Semiconductor
Toshiba Semiconductor
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2SA1300   PNP EPITAXIAL SILICON TRANSISTOR

UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES *High DC Current Gain and Excellent hFE Linearity. *hFE(1)=140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VC

Unisonic Technologies
Unisonic Technologies
datasheet pdf
2SA1300   Plastic-Encapsulated Transistors

Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA1300 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current A ICM : -2 Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range T

TRANSYS
TRANSYS
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2SA1300   PNP EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD. R 2SA1300 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use Strobe flash and medium power amplifier applications. Pinning 1 = Emitter 2 = Collector 3 = Base .190(4.83) .170(4.33) .190(4.83

Dc Components
Dc Components
datasheet pdf
2SA1300   PNP Plastic Encapsulated Transistor

2SA1300 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free -2 A, -20 V PNP Plastic Encapsulated Transistor FEATURES   TO-92 High DC Current gain and excellent hFE linearity Low Saturation Voltage G H CLASSIFICATION OF hF

SeCoS
SeCoS
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